报告人：Prof. Feng Ding, Hong Kong Polytechnic University
邀请人：王金兰
时间：5月26号（周四）下午2:40pm
地点：田家炳南楼203
Abstract:
The graphene chemical vapor deposition (CVD) growth on transition metal (TM) surface is the most promising method for high quality and large area graphene synthesis. While its mechanism remains a mystery in spite of the great experimental success. Here we are going to present our recent theoretical study on the mechanism of graphene CVD growth:
(1) C cluster’s structural transition from one dimensional (1D) C chain to two dimensional (2D) graphene island and its impact on graphene growth.
(2) The great advantage of graphene nucleation near a metal step edge than that on a terrace.
(3) The magic sized C cluster formation on metal surface.
Based on our theoretical studies, we propose the use of seeded graphene to synthesize high-quality graphene in large area.
A brief CV of Dr. Ding
Dr. Ding got his PhD from Department of Physics, Nanjing University in 2002 and then becomes a postdoctoral researcher in Gothenburg University from 2003. The he moved to Rice University as a research scientist from 2005. In 2009, he joined Institute of Textile and Clothing of Hong Kong Polytechnic University as an Assistant Professor. Dr. Ding‘s previous researches focus on the formation mechanism and properties of various carbon materials, including fullerene, carbon nanotubes and graphene. Dr. Ding’s achievements includes: the pioneered work of simulating carbon nanotube catalytic growth; theory of CNT growth through a screw dislocation; melting of supporting nanoparticels; self-healing mechanism of CNTs and the growth mechanism of graphene CVD growth. Until now, Dr. Ding has published more than 60 SCI journals (~ 15 published on high impact journals with IF > 7.0). These publications were cited more than 1000 times and Dr. Ding’s personal h-index is 20 now.