报告题目：Electrical reading and writing of antiferromagnets
时间：2023年2月15日(周三) 9:00 − 11:30 (北京时间)
线上：https://meeting.tencent.com/dm/XJC1Ynfakk4e
主持人：陈太师
摘要： Compared with ferromagnets, antiferromagnets hold huge potential in high-density information storage because of their ultrafast spin dynamics and vanishingly small stray field. Here we investigate the electrical detections and manipulations of antiferromagnetic moments, which might pave an alternative way towards new-generation spin memory devices.
[1] Xianzhe Chen et al., Octupole-driven magnetoresistance in an antiferromagnetic tunnel junction. Nature 613, 490 (2023).
[2] Xianzhe Chen et al., Control of spin current and antiferromagnetic moments via topological surface state. Nature Electronics 1, 5 (2022).
[3] Xianzhe Chen et al., Observation of the antiferromagnetic spin Hall effect. Nature Materials 20, 800 (2021).
[4] Xianzhe Chen et al., Electric field control of Néel spin-orbit torque in an antiferromagnet. Nature Materials 18, 931 (2019).
报告人简介：陈贤哲，于清华大学获得本科与博士学位，曾在日本东京大学、加州伯克利分校与劳伦斯伯克利国家实验室从事博士后研究。研究领域为反铁磁自旋电子学。目前，以第一作者在国际顶级期刊发表论文: Nature (一篇，2023)，Nature materials (两篇，2019 2021)， Nature electronics (一篇，2022), PRL 等，产生重要影响。