报告题目：Tuning Carrier Mobility and Interface Properties for High-Performance 2D Electronics
报告人：杨明 教授（香港理工大学应用物理系）
时间：2023年4月7日（周五）16：00-17：00
地点：九龙湖校区田家炳楼南203平星报告厅
报告摘要：
Two-dimensional (2D) semiconductors such as molybdenum disulfide (MoS2) could potentially replace silicon in future electronic devices. However, the low carrier mobility in the 2D MoS2 at room temperature and its inferior interface with high-k dielectrics, remain critical challenges for high-performance nanoelectronics. In this talk, we show that by introducing rippled lattice structure in 2D MoS2, a record-high carrier mobility can be achieved at room temperature, due to the increased intrinsic dielectric constant and much suppressed phonon scattering. For the interface between conventional high-k dielectrics and 2D MoS2, we find that hydrogenation is a desired approach to passivate the dangling bonds and improve the interface properties, in which the hydrogenation can selectively occur at high-k dielectrics such as Si3N4 and HfO2, and do not affect the 2D semiconductor MoS2. Finally, we report a data-driven approach to accelerate the development of various promising inorganic molecular crystals as the high-performance high-k dielectrics for 2D MoS2 based electronic devices. These results deepen the understanding of the carrier mobility in 2D semiconductors and their interface with high-k dielectrics, and could be useful for developing a broad range of high-performance 2D electronic and optoelectronic devices.
References:
1.Hong Kuan Ng, Du Xiang, Ady Suwardi, Guangwei Hu, Ke Yang, Yunshan Zhao, Tao Liu, Zhonghan Cao, Huajun Liu, Shisheng Li, Jing Cao, Qiang Zhu, Zhaogang Dong, Chee Kiang Ivan Tan, Dongzhi Chi, Cheng-Wei Qiu, Kedar Hippalgaonkar, Goki Eda, Ming Yang*, Jing Wu*, Improving carrier mobility in two-dimensional semiconductors with rippled materials, Nature Electronics 5, 489–496 (2022).
2.Yulin Yang, Tong Yang, Tingting Song, Jun Zhou, Jianwei Chai, Lai Mun Wong, Hongyi Zhang, Wenzhang Zhu, Shijie Wang, Ming Yang, Selective hydrogenation improves interface properties of high-k dielectrics on 2D semiconductors, Nano Research 15, 4646–4652 (2022).
报告人简介
杨明，香港理工大学应用物理系助理教授、博士生导师。其主要研究兴趣是利用高通量筛选、高通量第一性原理计算、机器学习等研究能源与催化材料、二维材料的各种物理性质与器件应用，理解与调控二维半导体材料与介电层、金属接触的界面性质。到目前为止，已在国际权威刊物如Nat. Electronics, Nat. Nanotechn., Nat. Physics, Nat. Commun., JACS, Adv. Mater. Nano Lett.,等发表超过150篇论文（Google Scholar上引用次数超过5300、H-index是41）、3项PCT专利、并贡献石墨烯手册的相关章节。