5月29日周三学术报告|Tailoring the electronic physics of layered quantum materials

发布者：蒋红燕发布时间：2024-05-24浏览次数：10

报告题目：Tailoring the electronic physics of layered quantum materials

报告人：张海静博士

时间：2024年5月29日9:30

地点：田家炳楼平星报告厅（203）

邀请人：董帅教授

报告人简介：

Haijing Zhang received her bachelor degree from Nanjing University and obtained her Ph.D in physics from the Hong Kong University of Science and Technology (HKUST). From 2014 to 2019, she worked as a post-doctoral fellow in the Physics Department of HKUST and the Department of Quantum Matter Physics at the University of Geneva. In October 2019, she joined the Max Planck Institute for Chemical Physics of Solids in Germany as a group leader. Her research interests primarily focus on the quantum and mesoscopic transport properties of correlated systems, as well as gate-controlled electronic phases transitions in layered quantum materials.

报告摘要：

Probing and engineering electronic states is a key goal in contemporary condensed matter physics. This process facilitates the understanding of many fundamental physical phenomena and advances the development of their technological applications. In this talk, I will provide an overview of our recent progress in probing and tailoring the emergent physical phenomena in layered quantum devices.

First, I will present our observation of a spontaneous anomalous Hall effect, a hallmark of time-reversal symmetry breaking, in a doped layered polar semiconductor. The magnitude of anomalous Hall conductivity can be further enhanced by tuning the carrier density, which sheds new light on the interplay of magnetic and ferroelectric-like responses [1]. Next, I will discuss that doping can also enable the concurrent emergence of Kondo screening and incommensurate magnetic order, which opens an alternative route to tune the competition between magnetic correlations and the Kondo effect [2].

If time permits, I will also discuss our recent results on probing the superconducting pairing symmetry of the layered kagome metal CsVs₃Sb₅ [3].

References

[1] S. Kim, J. Zhu, M. M. Piva, M. Schmidt, D. Fartab, A. P. Mackenzie, M. Baenitz, M. Nicklas, H. Rosner, A. M. Cook, R. G. Hernández, L. Šmejkal and H. Zhang*, “Observation of the anomalous Hall effect in a layered polar semiconductor”, Advanced Science, 202307306 (2023).

[2] J. Guimaraes, D. Fartab, M. Moravec, M. Schmidt, M. Baenitz, B. Schmidt and H. Zhang*, “Concurrence of directional Kondo transport and incommensurate magnetic order in the layered material AgCrSe₂”, to appear in Communications Physics, 2024.

[3] F. Sun, A. C. Salinas, S. Wilson and H. Zhang*, manuscript under review.