报告题目：Perovskite oxide materials for spintronics
报告人：Prof. JingshengCHEN（National University of Singapore）
时间：2024年12月17日（周二）10:30 – 11:30
地点：九龙湖校区田家炳楼南205贤文会议室
主持人：翟亚
报告摘要：
The transition metal oxides have a multitude of degrees of freedom, such as the crystal lattice, charge, spin and orbital. These tunable parameters are interconnected with each other and are not always fully accessible in other material classes. It is known that the rotation of the RuO6 octahedra of perovskite SrRuO3 has enormous impacts on its electrical and magnetic properties, which is expected to influence spin orbital torque (SOT). In this talk, I will discuss the control of the oxygen octahedral rotation in SrRuO3 and SrIrO3 by epitaxial growth and its effects on the SOT. SOT efficiency as large as 1.45 was obtained. We found the strength of SOT is strongly correlated to the octahedral rotation around its in-plane axes. The field-free switching of perpendicular magnetization in all oxide heterostructure SrIrO3/SrRuO3 by pure electric current and current induced switching of SrIrO3/La0.7Sr0.3MnO3 with in-plane anisotropy and thick La0.7Sr0.3MnO3 film were realized. Furthermore, we report the observation of the magnetic Weyl fermion in the transition metal oxide SrRuO3. We synthesized epitaxial SrRuO3 (111) thin films to investigate the chiral anomaly-induced magneto-transport properties and the electrostatic gating effect. We demonstrated that the electrical transport properties related to the magnetic Weyl fermion can be modulated effectively via ionic-liquid gating. Furthermore, we directly observed the Weyl nodes in SrRuO3 by the angle-resolved photoemission spectroscopy (ARPES), which is consistent with our first-principles calculations.
报告人简介：
Prof. Jingsheng CHEN is currently with Department of Materials Science and Engineering, NUS. He obtained his Ph.D degree in 1999 in Lanzhou University, China and joined NUS in December 2007. During 2001-2007 he worked at the Data Storage Institute as a research scientist. He has authored/co-authored more than 300 refereed journal papers including Nature, Nature Nanotechnology, Nature Comm. Science Advance, Advanced Materials, Physical Review X, Physical Review Letter etc., 3 book chapters, holds over ten patents and has made more than 100 invited presentation in the international conferences. His research work has obtained more than 16000 citations with H index of 67. His research interest includes magnetic and oxide based non-volatile memories, spintronics, ferroelectric tunnel junction, strongly correlated oxide materials. He secured more than S$17 million research grants from government and around US$ 1 million from Seagate Technology and more than S$ 1 million from Globalfoundries. The magnetic recording media in the newest generation of HDD (HAMR) utilized a few of his inventions. He is 2022 IEEE Magnetic Society Distinguished Lecturer and he is IEEE Fellow in Magnetic society.