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High-sensitivity, high-speed, broadband mid-infrared photodetector enabled by a van der Waals heterostructure with a vertical transport channel
The realization of room-temperature-operated, high-performance, miniaturized, low-power-consumption and Complementary Metal-Oxide-Semiconductor (CMOS)-compatible mid-infrared photodetectors is highly desirable for next-generation optoelectronic applications.....
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Direct Linearly Polarized Emission in van der Waals LEDs via Flexoelectric Effect
Following the rapid development of information technology, modern polarized light, which is a critical component for display and data transmission, has been in demand for miniaturization and high efficiency, rendering two-dimensional (2D) semiconductors potential candidates.....
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Light-emitting diodes based on intercalated transition metal dichalcogenides with suppressed efficiency roll-off at high generation rates
The capabilities of light-emitting diodes (LEDs) based on two-dimensional materials are restricted by efficiency roll-off, which is induced by exciton–exciton annihilation, at high current densities....
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Defect-Mediated Efficient and Tunable Emission in van der Waals Integrated Light Sources at Room Temperature
Despite defect-mediated states in monolayer semiconductors have been considered as efficient emitters in cryogenic conditions, they are severely quenched at room temperature (RT).....
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Van der Waals integrated single-junction light-emitting diodes exceeding 10% quantum efficiency at room temperature
The construction of miniaturized light-emitting diodes (LEDs) with high external quantum efficiency (EQE) at room temperature remains a challenge for on-chip optoelectronics....
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Room temperature efficient and tunable interlayer exciton emission in WS2/WSe2 heterobilayers at high generation rates
Transition metal dichalcogenide (TMDC) heterobilayers (HBs) have been intensively investigated lately because they offer novel platforms for the exploration of interlayer excitons (IXs).....
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High-responsivity, high-detectivity, broadband infrared photodetector based on MoS2/BP/MoS2 junction field-effect transistor
Sensitivity stands as a critical figure of merit in assessing the performance of a photodetector and can be characterized by two distinct parameters: responsivity or detectivity....
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Hot-carrier engineering for two-dimensional integrated infrared optoelectronics
Plasmonic hot carrier engineering holds great promise for advanced infrared optoelectronic devices. The process of hot carrier transfer has the potential to surpass the spectral limitations of semiconductors .....
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Deciphering Adverse Detrapped Hole Transfer in Hot-Electron Photoelectric Conversion at Infrared Wavelengths
Hot-carrier devices are promising alternatives for enabling path breaking photoelectric conversion. However, existing hot-carrier devices suffer from low efficiencies....
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Polarization-sensitive narrowband infrared photodetection triggered by optical Tamm state engineering
Polarization-sensitive narrowband photodetection at near-infrared (NIR) has attracted significant interest in optical communication, environmental monitoring, and intelligent recognition system.....
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Deciphering Adverse Detrapped Hole Transfer in Hot-Electron Photoelectric Conversion at Infrared Wavelengths
Narrow-bandgap 2D materials and semimetals, for example, graphene, black phosphorus (BP), tellurium (Te), and some novel transition metal dichalcogenides (TMDs), have been demonstrated....
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High output mode-locked laser empowered by defect regulation in 2D Bi2O2Se saturable absorber
Atomically thin Bi2O2Se has emerged as a novel two-dimensional (2D) material with an ultrabroadband nonlinear optical response, high carrier mobility and excellent air stability, showing great potential for the realization of optical modulators.....
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High-performance broadband WO3−x/Bi2O2Se photodetectors based on plasmon-induced hot-electron injection
Two-dimensional (2D) Bi2O2Se has emerged as a promising candidate for broadband photodetection, owing to its superior carrier mobility, outstanding air-stability, and suitable bandgap....
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Gate‐Tunable Polar Optical Phonon to Piezoelectric Scattering in Few‐Layer Bi2O2Se for High‐Performance Thermoelectrics
Atomically thin Bi2O2Se has emerged as a new member in 2D materials with ultrahigh carrier mobility and excellent air‐stability, showing great potential for electronics and optoelectronics....
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Dark Current Mechanisms and Suppression Strategies for Infrared Photodetectors Based on Two-Dimensional Materials
Motion tracking has attracted great attention in the fields of real‐time tracking, nanorobotics, and targeted therapy. For achieving more accurate motion tracking, the highly sensitive position‐sensitive detector....
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Defect Engineering in 2D Materials: Precise Manipulation and Improved Functionalities
Two-dimensional (2D) materials have attracted increasing interests in the last decade. The ultrathin feature of 2D materials makes them promising building blocks for next-generation electronic and optoelectronic devices....
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Graphene-Based Infrared Position-Sensitive Detector for Precise Measurements and High-Speed Trajectory Tracking
Noncontact optical sensing plays an important role in various applications, for example, motion tracking, pilotless automobile, precision machining, and laser radars. A device with features of high resolution....
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Fast Photoelectric Conversion in the Near‐Infrared Enabled by Plasmon‐Induced Hot‐Electron Transfer
Interfacial charge transfer is a fundamental and crucial process in photoelectric conversion. If charge transfer is not fast enough, carrier harvesting can compromise with competitive relaxation pathways...
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Sulfur‐Mastery: Precise Synthesis of 2D Transition Metal Dichalcogenides
Chemical vapor deposition (CVD) has been developed as the most promising method for the growth of transition metal dichalcogenides (TMDs). In this work, the key factor determining the growth of TMDs is ascertained....
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Defect Engineering for Modulating the Trap States in Two-dimensional Photoconductor
Here, we demonstrate that the trap states in two-dimensional ReS2 could be efficiently modulated by defect engineering through molecule decoration. The deep traps that greatly prolong the response time could be mostly filled by Protoporphyrin (H2PP) molecules...
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Two-dimensional transition metal dichalcogenides: interface and defect engineering
We summarize and highlight recent advances and state-of-the-art investigations on the interface and defect engineering of TMDCs and their corresponding applications in electronic and optoelectronic devices....
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High performance position-sensitive-detector based on graphene-silicon heterojunction
With increasing demands in long working distance, low energy consumption, and weak signal sensing systems, the poor responsivity of conventional Silicon-based PSDs has become a bottleneck limiting their applications...
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Interfacial amplification for graphene based position-sensitive-detectors
Position-sensitive-detectors (PSDs) based on lateral photoeffect has been widely used in diverse applications, including optical engineering, aerospace and military fields...
Welcome to Our Lab
Our group focuses on the spectroscopic investigation of low dimensional materials and the application in optoelectronic devices.
We explore the fundamental physical properties of novel low-dimensional materials using spectroscopic techniques, e.g. Raman, Photoluminescence. We also try to modulate the optoelectronic properties of these materials through defects/strain/interface engineering, and aim to develop high performance optoelectronic devices, such as photodetectors, light emitting and photovoltaic devices.
